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Effect of Thermal Stresses on Carrier Mobility and Keep-Out Zone Around Through-Silicon Vias for 3-D Integration

机译：热应力对3D集成硅通孔周围的载流子迁移率和保留区的影响

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Suk-kyu Ryu; Kuan-hsun Lu; Tengfei Jiang; Jang-hi Im; Senior Member; Rui Huang; Paul S. Ho;
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年度 2013
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1. Effect of Thermal Stresses on Carrier Mobility and Keep-Out Zone Around Through-Silicon Vias for 3-D Integration [J] . Ryu S.-K. Device and Materials Reliability, IEEE Transactions on . 2012,第2期

机译：热应力对3D集成硅通孔周围载流子迁移率和保留区的影响
2. E-field induced keep-out zone determination method of through-silicon vias for 3-D ICs [J] . Kim Kibeom, Choi Junsung, Woo Seongho, Microelectronics & Reliability . 2019,第JULa期

机译：3-D IC的硅通孔的电场感应保留区确定方法
3. E-field induced keep-out zone determination method of through-silicon vias for 3-D ICs [J] . Kim Kibeom, Choi Junsung, Woo Seongho, Microelectronics & Reliability . 2019,第Jula期

机译：E场诱导3-D ICS的硅通孔通孔的远程区测定方法
4. Thermal stress characteristics and impact on device keep-out zone for 3-D ICs containing through-silicon-vias [C] . Jiang Tengfei, Ryu Suk-Kyu, Zhao Qiu, VLSI Technology (VLSIT), 2012 Symposium on . 2012

机译：包含硅通孔的3D IC的热应力特性及其对器件保留区的影响
5. The Scaling and Microstructure Effects on the Thermal Stress and Reliability of Through-Silicon Vias in 3D Integrated Circuits [D] . Spinella, Laura Emilie. 2017

机译：对3D集成电路中通过硅通孔的热应力和可靠性的缩放和微观结构效应
6. Achieving High Thermoelectric Performance in Rare-Earth Element-Free CaMg2Bi2 with High Carrier Mobility and Ultralow Lattice Thermal Conductivity [O] . Muchun Guo, Fengkai Guo, Jianbo Zhu, 2020

机译：具有高载流子移动性和超级晶格导热率的稀土元素CAMG2BI2中的高热电性能
7. Synchrotron X-Ray Microdiffraction Investigation of Scaling Effects on Reliability for Through-Silicon Vias for 3-D Integration [O] . Laura Spinella, Tengfei Jiang, Nobumichi Tamura, 2019

机译：Synchrotron X射线Microdiffraction对3-D集成的通过硅通孔通孔的可靠性的调查研究

Effect of Thermal Stresses on Carrier Mobility and Keep-Out Zone Around Through-Silicon Vias for 3-D Integration

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